All MOSFET. YJD80N03B Datasheet

 

YJD80N03B Datasheet and Replacement


   Type Designator: YJD80N03B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

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YJD80N03B Datasheet (PDF)

 ..1. Size:620K  cn yangzhou yangjie elec
 yjd80n03b.pdf pdf_icon

YJD80N03B

RoHS COMPLIANT YJD80N03B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 5.5 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel

 6.1. Size:816K  cn yangzhou yangjie elec
 yjd80n03a.pdf pdf_icon

YJD80N03B

RoHS COMPLIANT YJD80N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 4.5mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell

Datasheet: YJD40N04A , YJD45G10A , YJD45P03A , YJD50N03A , YJD60N02A , YJD60N04A , YJD65G10A , YJD80N03A , IRFB3607 , YJD90N02A , YJG15GP10A , YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A , YJG80G06B , YJG85G06AK .

History: STV160NF02LAT4 | IPB34CN10N | FQD2N50TF | KP771V | STD35NF06T4 | P2610BT | DMN3035LWN

Keywords - YJD80N03B MOSFET datasheet

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