All MOSFET. YJD80N03B Datasheet

 

YJD80N03B MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJD80N03B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52.8 nC
   trⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252

 YJD80N03B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJD80N03B Datasheet (PDF)

 ..1. Size:620K  cn yangzhou yangjie elec
 yjd80n03b.pdf

YJD80N03B YJD80N03B

RoHS COMPLIANT YJD80N03B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 5.5 mohm DS(ON) GS R ( at V =4.5V) 8.0 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel

 6.1. Size:816K  cn yangzhou yangjie elec
 yjd80n03a.pdf

YJD80N03B YJD80N03B

RoHS COMPLIANT YJD80N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V =10V) 4.5mohm DS(ON) GS R ( at V =4.5V) 6.0mohm DS(ON) GS 100% UIS Tested 100% V Tested DSGeneral Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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