YJL2312AL Datasheet and Replacement
Type Designator: YJL2312AL
Marking Code: S12.
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id| ⓘ - Maximum Drain Current: 7.6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 11.05
nC
tr ⓘ - Rise Time: 46
nS
Cossⓘ -
Output Capacitance: 133
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
SOT23
-
MOSFET ⓘ Cross-Reference Search
YJL2312AL Datasheet (PDF)
..1. Size:1343K cn yangzhou yangjie elec
yjl2312al.pdf 
RoHS COMPLIANT YJL2312AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.6A D R ( at V =4.5V) 17mohm DS(ON) GS R ( at V =2.5V) 20mohm DS(ON) GS R ( at V =1.8V) 35mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power LV MOSFET technology High Power and current handing capabilit
6.1. Size:562K cn yangzhou yangjie elec
yjl2312a.pdf
RoHS COMPLIANT YJL2312A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 6.8A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW
9.1. Size:542K cn yangzhou yangjie elec
yjl2304a.pdf
RoHS COMPLIANT YJL2304A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 3.6A D R ( at V =10V) 39 mohm DS(ON) GS R ( at V =4.5V) 52 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M
9.2. Size:650K cn yangzhou yangjie elec
yjl2305a.pdf
RoHS COMPLIANT YJL2305A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -5.6A D R ( at V =-4.5V) 36.4 mohm DS(ON) GS R ( at V =-2.5V) 53.0 mohm DS(ON) GS R ( at V =-1.8V) 70.0 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High
9.3. Size:628K cn yangzhou yangjie elec
yjl2303a.pdf
RoHS COMPLIANT YJL2303A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -3.0A D R ( at V =-10V) 85 mohm DS(ON) GS R ( at V =-4.5V) 105 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications PMW applicatio
9.4. Size:564K cn yangzhou yangjie elec
yjl2302b.pdf
RoHS COMPLIANT YJL2302B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 52 mohm DS(ON) GS R ( at V =2.5V) 80 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma
9.5. Size:618K cn yangzhou yangjie elec
yjl2301g.pdf
RoHS COMPLIANT YJL2301G P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -2.0A D R ( at V =-4.5V) 100 mohm DS(ON) GS R ( at V =-2.5V) 130 mohm DS(ON) GS R ( at V =-1.8V) 230 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications
9.6. Size:611K cn yangzhou yangjie elec
yjl2305b.pdf
RoHS COMPLIANT YJL2305B P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.4A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 75 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed
9.7. Size:593K cn yangzhou yangjie elec
yjl2301d.pdf
RoHS COMPLIANT YJL2301D P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -3.8A D R ( at V =-4.5V) 52 mohm DS(ON) GS R ( at V =-2.5V) 78 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi
9.8. Size:579K cn yangzhou yangjie elec
yjl2301f.pdf
RoHS COMPLIANT YJL2301F P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2A D R ( at V =-4.5V) 120 mohm DS(ON) GS R ( at V =-2.5V) 150 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi
9.9. Size:527K cn yangzhou yangjie elec
yjl2302a.pdf
RoHS COMPLIANT YJL2302A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.3A D R ( at V =4.5V) 27 mohm DS(ON) GS R ( at V =2.5V) 37 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M
9.10. Size:535K cn yangzhou yangjie elec
yjl2300a.pdf
RoHS COMPLIANT YJL2300A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.5A D R ( at V =4.5V) 25 mohm DS(ON) GS R ( at V =2.5V) 32 mohm DS(ON) GS R ( at V =1.8V) 49 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW
9.11. Size:519K cn yangzhou yangjie elec
yjl2301c.pdf
RoHS COMPLIANT YJL2301C P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.4A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and Current handing capability Low Gate Ch
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History: AM2328NE
Keywords - YJL2312AL MOSFET datasheet
YJL2312AL cross reference
YJL2312AL equivalent finder
YJL2312AL lookup
YJL2312AL substitution
YJL2312AL replacement
