YJL3401A Specs and Replacement

Type Designator: YJL3401A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

YJL3401A substitution

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YJL3401A datasheet

 ..1. Size:642K  cn yangzhou yangjie elec
 yjl3401a.pdf pdf_icon

YJL3401A

RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s... See More ⇒

 8.1. Size:578K  cn yangzhou yangjie elec
 yjl3404a.pdf pdf_icon

YJL3401A

RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection ... See More ⇒

 8.2. Size:574K  cn yangzhou yangjie elec
 yjl3400a.pdf pdf_icon

YJL3401A

RoHS COMPLIANT YJL3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 27 mohm DS(ON) GS R ( at V =4.5V) 33 mohm DS(ON) GS R ( at V =2.5V) 51 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switch... See More ⇒

 8.3. Size:706K  cn yangzhou yangjie elec
 yjl3407a.pdf pdf_icon

YJL3401A

RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect... See More ⇒

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Detailed specifications: YJL2305B, YJL2312A, YJL2312AL, YJL3134K, YJL3134KW, YJL3139KDW, YJL3139KT, YJL3400A, AO3400A, YJL3404A, YJL3407A, YJL3415A, YJL3416A, YJP150N06AQ, YJP200G06A, YJP70G10A, YJQ20N04A

Keywords - YJL3401A MOSFET specs

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