TPS1120
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPS1120
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.84
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 1.17
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Qgⓘ - Total Gate Charge: 5.45
nC
trⓘ - Rise Time: 10
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
SO8
TPS1120
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPS1120
Datasheet (PDF)
..1. Size:373K texas
tps1120 tps1120y.pdf
TPS1120, TPS1120YDUAL P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS080A MARCH 1994 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.18 at VGS = 10 V(TOP VIEW)D 3-V CompatibleD Requires No External VCC1SOURCE 1 8 1DRAIN1GATE 2 7 1DRAIND TTL and CMOS Compatible Inputs2SOURCE 3 6 2DRAIND VGS(th) = 1.5 V Max2GATE 4 5 2DRAIND ESD Protection Up to 2 kV perMIL
9.1. Size:485K texas
tps1100d tps1100pw.pdf
TPS1100, TPS1100YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS078C DECEMBER 1993 REVISED AUGUST 1995D OR PW PACKAGED Low rDS(on) . . . 0.18 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin
9.2. Size:493K texas
tps1101 tps1101y.pdf
TPS1101, TPS1101YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS079C DECEMBER 1993 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.09 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin TSSOP
9.3. Size:710K texas
tps1100 tps1100y.pdf
TPS1100, TPS1100YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS078C DECEMBER 1993 REVISED AUGUST 1995D OR PW PACKAGED Low rDS(on) . . . 0.18 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin
9.4. Size:490K texas
tps1101d tps1101pwr.pdf
TPS1101, TPS1101YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS079C DECEMBER 1993 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.09 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin TSSOP
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