TMP10N65H Datasheet. Specs and Replacement

Type Designator: TMP10N65H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 149 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

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TMP10N65H datasheet

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 tma10n65h tmp10n65h.pdf pdf_icon

TMP10N65H

TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1... See More ⇒

 6.1. Size:577K  trinnotech
 tmp10n65 tmpf10n65.pdf pdf_icon

TMP10N65H

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N... See More ⇒

 6.2. Size:607K  trinnotech
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TMP10N65H

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A ... See More ⇒

 7.1. Size:609K  trinnotech
 tmp10n60a tmpf10n60a.pdf pdf_icon

TMP10N65H

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A ... See More ⇒

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Detailed specifications: TPS1100, TPS1100Y, TPS1101, TPS1101Y, TPS1120, TPS1120Y, TMA10N60H, TMA10N65H, IRF4905, TMA10N80H, TMA12N50H, TMA12N65H, TMP12N65H, TMA20N65H, TMP20N65H, TMA20N65HG, TMW20N65HG

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