TMD4N60H MOSFET. Datasheet pdf. Equivalent

   Type Designator: TMD4N60H
   Marking Code: U4N60H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 69.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO251

TMD4N60H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMD4N60H Datasheet (PDF)

..1. Size:543K cn wuxi unigroup
tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf

7.1. Size:317K trinnotech
tmd4n60 tmu4n60.pdf

TMD4N60/TMU4N60TMD4N60G/TMU4N60GVDSS = 660 V @TjmaxFeaturesID = 4A Low gate chargeRDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHSTMD4N60G/TMU4N60G D-PAK/I-PAK

7.2. Size:464K trinnotech
tmd4n60az tmu4n60az.pdf