TMA6N90H Specs and Replacement

Type Designator: TMA6N90H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm

Package: TO220F

TMA6N90H substitution

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TMA6N90H datasheet

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TMA6N90H

TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90... See More ⇒

Detailed specifications: TMA2N60H, TMD2N60H, TMT2N60H, TMU2N60H, TMA4N60H, TMU4N60H, TMD4N60H, TMP4N60H, 12N60, TMP6N90H, TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H, TMA7N65H, TMP7N65H, TMD7N65H

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs