All MOSFET. TMA6N90H Datasheet

 

TMA6N90H Datasheet and Replacement


   Type Designator: TMA6N90H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: TO220F
 

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TMA6N90H Datasheet (PDF)

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TMA6N90H

TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90

Datasheet: TMA2N60H , TMD2N60H , TMT2N60H , TMU2N60H , TMA4N60H , TMU4N60H , TMD4N60H , TMP4N60H , 4N60 , TMP6N90H , TMA7N60H , TMC7N60H , TMD7N60H , TMU7N60H , TMA7N65H , TMP7N65H , TMD7N65H .

History: SSF60R260S2E | KIA13N50H-263 | SSM9477M | RHK005N03 | SSP80R600S2 | UPA2591T1H | DMN2016UTS

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