TMD7N60H Datasheet and Replacement
Type Designator: TMD7N60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO252
TMD7N60H Datasheet (PDF)
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf
TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM
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TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A
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TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
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TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A
Datasheet: TMA4N60H , TMU4N60H , TMD4N60H , TMP4N60H , TMA6N90H , TMP6N90H , TMA7N60H , TMC7N60H , IRLZ44N , TMU7N60H , TMA7N65H , TMP7N65H , TMD7N65H , TMU7N65H , TMA8N60H , TMD8N60H , TMU8N60H .
Keywords - TMD7N60H MOSFET datasheet
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History: VBZM4N20 | WVM4N50
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