TMD7N60H Specs and Replacement
Type Designator: TMD7N60H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO252
TMD7N60H substitution
- MOSFET ⓘ Cross-Reference Search
TMD7N60H datasheet
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf
TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM... See More ⇒
tmd7n60z tmu7n60z.pdf
TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A ... See More ⇒
tmd7n65az tmu7n65az.pdf
TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒
tmd7n65z tmu7n65z.pdf
TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A ... See More ⇒
Detailed specifications: TMA4N60H, TMU4N60H, TMD4N60H, TMP4N60H, TMA6N90H, TMP6N90H, TMA7N60H, TMC7N60H, AON6380, TMU7N60H, TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H, TMA8N60H, TMD8N60H, TMU8N60H
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