TMA7N65H MOSFET. Datasheet pdf. Equivalent
Type Designator: TMA7N65H
Marking Code: A7N65H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220F
TMA7N65H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMA7N65H Datasheet (PDF)
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf
TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM
tma7n90 tman7n90.pdf
TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax Features ID = 7.2A Low gate charge RDS(on) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3P/TO3PN G S Device Package Marking Remark TMA7N90/TMAN7N90 TO-3P TMA7N90/TMAN7N90 RoHS Absolute Maximum Ratings Parameter Symbol TMA7N90/TMAN7N90 Uni
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
