TMP7N65H Datasheet and Replacement
Type Designator: TMP7N65H
Marking Code: P7N65H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 22 nC
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220
TMP7N65H substitution
TMP7N65H Datasheet (PDF)
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM
tmp7n65az tmpf7n65az.pdf
TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
tmp7n65z tmpf7n65z.pdf
TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A
tmp7n60z tmpf7n60z.pdf
TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A
Datasheet: TMP4N60H , TMA6N90H , TMP6N90H , TMA7N60H , TMC7N60H , TMD7N60H , TMU7N60H , TMA7N65H , IRFP450 , TMD7N65H , TMU7N65H , TMA8N60H , TMD8N60H , TMU8N60H , TMA8N65H , TMC8N65H , TMD8N65H .
History: SWD2N40DC
Keywords - TMP7N65H MOSFET datasheet
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History: SWD2N40DC
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