All MOSFET. TMU7N65H Datasheet

 

TMU7N65H Datasheet and Replacement


   Type Designator: TMU7N65H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO251
 

 TMU7N65H substitution

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TMU7N65H Datasheet (PDF)

 ..1. Size:1062K  cn wuxi unigroup
 tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf pdf_icon

TMU7N65H

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM

 7.1. Size:461K  trinnotech
 tmd7n65az tmu7n65az.pdf pdf_icon

TMU7N65H

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

 7.2. Size:463K  trinnotech
 tmd7n65z tmu7n65z.pdf pdf_icon

TMU7N65H

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A

 8.1. Size:457K  trinnotech
 tmd7n60z tmu7n60z.pdf pdf_icon

TMU7N65H

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A

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Datasheet: TMP6N90H , TMA7N60H , TMC7N60H , TMD7N60H , TMU7N60H , TMA7N65H , TMP7N65H , TMD7N65H , 20N50 , TMA8N60H , TMD8N60H , TMU8N60H , TMA8N65H , TMC8N65H , TMD8N65H , TMU8N65H , TMB120N08A .

History: STL12N65M5 | IRFPS40N60KPBF | FDMS8558SDC | R5011FNJ | NVATS5A106PLZ | MS5N100FD | KO3409

Keywords - TMU7N65H MOSFET datasheet

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