TMU7N65H Specs and Replacement

Type Designator: TMU7N65H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO251

TMU7N65H substitution

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TMU7N65H datasheet

 ..1. Size:1062K  cn wuxi unigroup
 tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf pdf_icon

TMU7N65H

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES l Fast switching l 100% avalanche tested l Improved dv/dt capability APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA7N65H TO-220F A7N65H TM... See More ⇒

 7.1. Size:461K  trinnotech
 tmd7n65az tmu7n65az.pdf pdf_icon

TMU7N65H

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

 7.2. Size:463K  trinnotech
 tmd7n65z tmu7n65z.pdf pdf_icon

TMU7N65H

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A ... See More ⇒

 8.1. Size:457K  trinnotech
 tmd7n60z tmu7n60z.pdf pdf_icon

TMU7N65H

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A ... See More ⇒

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Detailed specifications: TMP6N90H, TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H, TMA7N65H, TMP7N65H, TMD7N65H, STP80NF70, TMA8N60H, TMD8N60H, TMU8N60H, TMA8N65H, TMC8N65H, TMD8N65H, TMU8N65H, TMB120N08A

Keywords - TMU7N65H MOSFET specs

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