All MOSFET. TPD60R3K4C Datasheet

 

TPD60R3K4C Datasheet and Replacement


   Type Designator: TPD60R3K4C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: TO252
 

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TPD60R3K4C Datasheet (PDF)

 ..1. Size:578K  cn wuxi unigroup
tpa60r3k4c tpp60r3k4c tpu60r3k4c tpd60r3k4c.pdf pdf_icon

TPD60R3K4C

TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information

 7.1. Size:402K  cn wuxi unigroup
tpd60r330m.pdf pdf_icon

TPD60R3K4C

TPD60R330M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 7.2. Size:750K  cn wuxi unigroup
tpp60r350c tpa60r350c tpu60r350c tpd60r350c tpc60r350c tpb60r350c.pdf pdf_icon

TPD60R3K4C

TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 7.3. Size:665K  cn wuxi unigroup
tpa60r360mfd tpd60r360mfd.pdf pdf_icon

TPD60R3K4C

TPA60R360MFD,TPD60R360MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l

Datasheet: TPP60R240M , TPA60R260MFD , TPA60R330M , TPA60R360MFD , TPD60R360MFD , TPA60R3K4C , TPP60R3K4C , TPU60R3K4C , MMD60R360PRH , TPA60R530M , TPD60R530M , TPU60R530M , TPA60R600MFD , TPD60R600MFD , TPA65R070D , TPB65R070D , TPP65R070D .

History: RP1E100XN | SML5020BN | PW567EA | STP180N4F6 | BUZ102 | PFF12N65 | IRLL014PBF

Keywords - TPD60R3K4C MOSFET datasheet

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