TPU60R530M MOSFET. Datasheet pdf. Equivalent
Type Designator: TPU60R530M
Marking Code: 60R530M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.8 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 27 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO251
TPU60R530M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPU60R530M Datasheet (PDF)
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