TPP65R170M MOSFET. Datasheet pdf. Equivalent
Type Designator: TPP65R170M
Marking Code: 65R170M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38.5 nC
trⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO220
TPP65R170M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPP65R170M Datasheet (PDF)
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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRFP140
History: IRFP140
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