TPA65R180D MOSFET. Datasheet pdf. Equivalent
Type Designator: TPA65R180D
Marking Code: 65R180D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
TPA65R180D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPA65R180D Datasheet (PDF)
tpa65r180d.pdf
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History: MCH6429 | 2SK1705 | NCE65NF190K
History: MCH6429 | 2SK1705 | NCE65NF190K
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