TPB65R260M Datasheet and Replacement
Type Designator: TPB65R260M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 105
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 15
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 63
nS
Cossⓘ -
Output Capacitance: 43
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
TPB65R260M Datasheet (PDF)
..1. Size:1069K cn wuxi unigroup
tpa65r260m tpb65r260m tpc65r260m tpp65r260m tpv65r260m tpw65r260m.pdf 
TPA65R260M, TPB65R260M, TPC65R260M, TPP65R260M, TPV65R260M, TPW65R260MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Pac
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TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com
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tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf
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tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf
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Datasheet: TPW65R170M
, TPA65R180D
, TPA65R190MFD
, TPA65R1K5M
, TPD65R1K5M
, TPU65R1K5M
, TPY65R1K5MB
, TPA65R260M
, 2SK3878
, TPC65R260M
, TPP65R260M
, TPV65R260M
, TPW65R260M
, TPA65R280D
, TPB65R280D
, TPC65R280D
, TPD65R280D
.
Keywords - TPB65R260M MOSFET datasheet
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TPB65R260M equivalent finder
TPB65R260M lookup
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