TPP65R280D Specs and Replacement

Type Designator: TPP65R280D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220

TPP65R280D substitution

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TPP65R280D datasheet

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TPP65R280D

TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒

 7.1. Size:1069K  cn wuxi unigroup
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TPP65R280D

TPA65R260M, TPB65R260M, TPC65R260M, TPP65R260M, TPV65R260M, TPW65R260M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l Very low FOM RDS(on) Qg l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Pac... See More ⇒

 8.1. Size:554K  cn wuxi unigroup
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TPP65R280D

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki... See More ⇒

 8.2. Size:832K  cn wuxi unigroup
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TPP65R280D

TPB65R135MFD,TPP65R135MFD,TPW65R135MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an ... See More ⇒

Detailed specifications: TPC65R260M, TPP65R260M, TPV65R260M, TPW65R260M, TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, IRF9540N, TPU65R280D, TPA65R300MFD, TPA65R360M, TPB65R360M, TPC65R360M, TPD65R360M, TPP65R360M, TPR65R360M

Keywords - TPP65R280D MOSFET specs

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