TPD65R520D MOSFET. Datasheet pdf. Equivalent
Type Designator: TPD65R520D
Marking Code: 65R520D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.5 nC
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO252
TPD65R520D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPD65R520D Datasheet (PDF)
tpd65r520d.pdf
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