TPB65R750C Datasheet and Replacement
Type Designator: TPB65R750C
Marking Code: 65R750C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 12
nC
tr ⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 24
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
TPB65R750C Datasheet (PDF)
..1. Size:758K cn wuxi unigroup
tpa65r750c tpb65r750c tpc65r750c tpd65r750c tpp65r750c tpu65r750c.pdf 
TPA65R750C, TPB65R750C, TPC65R750C, TPD65R750C, TPP65R750C, TPU65R750C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
8.1. Size:832K cn wuxi unigroup
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf
TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an
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tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf
TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com
8.3. Size:947K cn wuxi unigroup
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf
TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
8.4. Size:741K cn wuxi unigroup
tpp65r600c tpa65r600c tpu65r600c tpd65r600c tpc65r600c tpb65r600c.pdf
TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C, TPB65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
8.5. Size:1069K cn wuxi unigroup
tpa65r260m tpb65r260m tpc65r260m tpp65r260m tpv65r260m tpw65r260m.pdf
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tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf
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8.8. Size:801K cn wuxi unigroup
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf
TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de
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8.11. Size:554K cn wuxi unigroup
tpb65r070d tpp65r070d.pdf
TPB65R070D,TPP65R070D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consum
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tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf
TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
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tpp65r380c tpa65r380c tpu65r380c tpd65r380c tpc65r380c tpb65r380c.pdf
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TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic
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tpa65r600m tpb65r600m tpd65r600m tpu65r600m.pdf
TPA65R600M,TPB65R600M,TPD65R600M,TPU65R600MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de
Datasheet: IRFP344
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History: RU75N08
| DHS045N98F
Keywords - TPB65R750C MOSFET datasheet
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