TPD65R750C Datasheet and Replacement
Type Designator: TPD65R750C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 24
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO252
-
MOSFET ⓘ Cross-Reference Search
TPD65R750C Datasheet (PDF)
..1. Size:758K cn wuxi unigroup
tpa65r750c tpb65r750c tpc65r750c tpd65r750c tpp65r750c tpu65r750c.pdf 
TPA65R750C, TPB65R750C, TPC65R750C, TPD65R750C, TPP65R750C, TPU65R750C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
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TPD65R700MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
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tpd65r520d.pdf
TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh
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tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf
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tpa65r950m tpd65r950m.pdf
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tpa65r950m tpb65r950m tpd65r950m.pdf
TPA65R950M,TPB65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with
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tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf
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tpa65r360m tpd65r360m tpp65r360m tpu65r360m.pdf
TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Package InformationDevice
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tpa65r520d tpd65r520d.pdf
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tpd65r600m.pdf
TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
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tpa65r600m tpb65r600m tpd65r600m tpu65r600m.pdf
TPA65R600M,TPB65R600M,TPD65R600M,TPU65R600MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de
Datasheet: TPD65R520D
, TPA65R600M
, TPB65R600M
, TPD65R600M
, TPU65R600M
, TPA65R750C
, TPB65R750C
, TPC65R750C
, 20N50
, TPP65R750C
, TPU65R750C
, TPA65R950M
, TPB65R950M
, TPD65R950M
, TPA70R190C
, TPC70R190C
, TPP70R190C
.
History: TPD60R530M
Keywords - TPD65R750C MOSFET datasheet
TPD65R750C cross reference
TPD65R750C equivalent finder
TPD65R750C lookup
TPD65R750C substitution
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