FDB44N25 PDF and Equivalents Search

September 2005 TM UniFET FDB44N25 250V N-Channel MOSFET Features Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 47 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailore... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

September 2005 TM UniFET FDB44N25 250V N-Channel MOSFET Features Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 47 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailore... See More ⇒