All MOSFET. FDB44N25 Datasheet

 

FDB44N25 Datasheet and Replacement


   Type Designator: FDB44N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 307 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 47 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO263 D2PAK
 

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FDB44N25 Datasheet (PDF)

 ..1. Size:722K  fairchild semi
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FDB44N25

September 2005TMUniFETFDB44N25250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 47 nC)DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailore

 ..2. Size:527K  onsemi
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FDB44N25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:718K  fairchild semi
 fdb44n25tm.pdf pdf_icon

FDB44N25

September 2005TMUniFETFDB44N25250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 47 nC)DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailore

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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