TPD70R360M Datasheet and Replacement
Type Designator: TPD70R360M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 69.5 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO252
TPD70R360M substitution
TPD70R360M Datasheet (PDF)
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TPB70R950M,TPD70R950MWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro
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TPA70R450C, TPB70R450C, TPC70R450C, TPD70R450C, TPP70R450C, TPU70R450C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
Datasheet: TPB65R950M , TPD65R950M , TPA70R190C , TPC70R190C , TPP70R190C , TPV70R190C , TPA70R260M , TPA70R360M , IRFZ46N , TPP70R360M , TPU70R360M , TPA70R450C , TPB70R450C , TPC70R450C , TPD70R450C , TPP70R450C , TPU70R450C .
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