TPA73R300M Datasheet and Replacement
Type Designator: TPA73R300M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 730 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220F
TPA73R300M substitution
TPA73R300M Datasheet (PDF)
tpa73r300m.pdf

TPA73R300M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
tpa73r190m.pdf

TPA73R190M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
tpa73r400m.pdf

TPA73R400M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
Datasheet: TPP70R450C , TPU70R450C , TPA70R600M , TPB70R600M , TPD70R600M , TPR70R600M , TPU70R600M , TPA73R190M , NCEP15T14 , TPA73R400M , TPA80R180M , TPB80R180M , TPA80R250A , TPP80R250A , TPW80R250A , TPA80R300C , TPB80R300C .
Keywords - TPA73R300M MOSFET datasheet
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