TPA80R180M
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPA80R180M
Marking Code: 80R180M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 44.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 54.9
nC
trⓘ - Rise Time: 76.9
nS
Cossⓘ -
Output Capacitance: 56.81
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO220F
TPA80R180M
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPA80R180M
Datasheet (PDF)
..1. Size:811K cn wuxi unigroup
tpa80r180m tpb80r180m.pdf
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