TPA80R180M MOSFET. Datasheet pdf. Equivalent
Type Designator: TPA80R180M
Marking Code: 80R180M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54.9 nC
trⓘ - Rise Time: 76.9 nS
Cossⓘ - Output Capacitance: 56.81 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
TPA80R180M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPA80R180M Datasheet (PDF)
tpa80r180m tpb80r180m.pdf
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