TPB80R300C
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPB80R300C
Marking Code: 80R300C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 151
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 46
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 116
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO263
TPB80R300C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPB80R300C
Datasheet (PDF)
..1. Size:663K cn wuxi unigroup
tpp80r300c tpa80r300c tpv80r300c tpc80r300c tpb80r300c.pdf
TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Informatio
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tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf
TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse
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TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
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