All MOSFET. TPA80R750C Datasheet

 

TPA80R750C MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPA80R750C
   Marking Code: 80R750C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.5 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F

 TPA80R750C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPA80R750C Datasheet (PDF)

 ..1. Size:753K  cn wuxi unigroup
 tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf

TPA80R750C TPA80R750C

TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:663K  cn wuxi unigroup
 tpp80r300c tpa80r300c tpv80r300c tpc80r300c tpb80r300c.pdf

TPA80R750C TPA80R750C

TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Informatio

 8.2. Size:567K  cn wuxi unigroup
 tpa80r250a tpp80r250a tpw80r250a.pdf

TPA80R750C TPA80R750C

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa

 8.3. Size:1210K  cn wuxi unigroup
 tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPA80R750C TPA80R750C

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 8.4. Size:811K  cn wuxi unigroup
 tpa80r180m tpb80r180m.pdf

TPA80R750C TPA80R750C

TPA80R180M,TPB80R180MWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTV18N60P

 

 
Back to Top