TPP65R120M MOSFET Datasheet: N-Ch, 650V, 30A. Full specification with pinout and replacement list

TPP65R120M Specs and Replacement

Type Designator: TPP65R120M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO220

TPP65R120M substitution

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TPP65R120M datasheet

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