TPW65R135MFD Datasheet and Replacement
Type Designator: TPW65R135MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 83 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: TO247
TPW65R135MFD substitution
TPW65R135MFD Datasheet (PDF)
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
tpa65r170m tpp65r170m tpv65r170m tpw65r170m.pdf

TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device T
tpa65r100mfd tpv65r100mfd tpw65r100mfd.pdf

TPA65R100MFD,TPV65R100MFD,TPW65R100MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide a
Datasheet: TPP65R075DFD , TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , 50N06 , TPB70R950M , TPD70R950M , TPD50R3K8D , TPD60R1K4M , TPU60R1K4M , TPD60R1K5MFD , TPD60R330M , TPD65R700MFD .
History: IPB80N06S2L-11 | SI8410DB | AP30T10GK
Keywords - TPW65R135MFD MOSFET datasheet
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History: IPB80N06S2L-11 | SI8410DB | AP30T10GK



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