TPB70R950M Datasheet and Replacement
Type Designator: TPB70R950M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO263
TPB70R950M substitution
TPB70R950M Datasheet (PDF)
tpb70r950m tpd70r950m.pdf
TPB70R950M,TPD70R950MWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro
tpp70r950c tpa70r950c tpu70r950c tpd70r950c tpc70r950c tpb70r950c.pdf
TPP70R950C, TPA70R950C, TPU70R950C, TPD70R950C, TPC70R950C, TPB70R950C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
tpa70r450c tpb70r450c tpc70r450c tpd70r450c tpp70r450c tpu70r450c.pdf
TPA70R450C, TPB70R450C, TPC70R450C, TPD70R450C, TPP70R450C, TPU70R450C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
tpa70r600m tpb70r600m tpd70r600m tpr70r600m tpu70r600m.pdf
TPA70R600M,TPB70R600M,TPD70R600M,TPR70R600M,TPU70R600MWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conductio
Datasheet: TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD , IRF640 , TPD70R950M , TPD50R3K8D , TPD60R1K4M , TPU60R1K4M , TPD60R1K5MFD , TPD60R330M , TPD65R700MFD , TPD70R1K5M .
History: IXFR12N100F | IRFI540G | AP9576GM-HF | APS04N60H | MTP1406M3 | PK5A1BA
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History: IXFR12N100F | IRFI540G | AP9576GM-HF | APS04N60H | MTP1406M3 | PK5A1BA
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