TPB70R950M MOSFET. Datasheet pdf. Equivalent
Type Designator: TPB70R950M
Marking Code: 70R950M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.6 nC
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO263
TPB70R950M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPB70R950M Datasheet (PDF)
tpb70r950m tpd70r950m.pdf
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