All MOSFET. FDB8160F085 Datasheet

 

FDB8160F085 Datasheet and Replacement


   Type Designator: FDB8160F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 254 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO263 D2PAK
 

 FDB8160F085 substitution

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FDB8160F085 Datasheet (PDF)

 7.1. Size:317K  fairchild semi
 fdb8160.pdf pdf_icon

FDB8160F085

October 2010FDB8160_F085N-Channel PowerTrench MOSFET 30V, 80A, 1.8m ApplicationsFeatures Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A 12V Automotive Load Control Typ Qg(10) = 187nC at VGS = 10V Starter/Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode DC/DC converter UIS Capability (Single Pulse and Repetitive Pulse) Quali

 7.2. Size:340K  fairchild semi
 fdb8160 f085.pdf pdf_icon

FDB8160F085

October 2010FDB8160_F085N-Channel PowerTrench MOSFET 30V, 80A, 1.8m ApplicationsFeatures Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A 12V Automotive Load Control Typ Qg(10) = 187nC at VGS = 10V Starter/Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode DC/DC converter UIS Capability (Single Pulse and Repetitive Pulse) Quali

 9.1. Size:536K  fairchild semi
 fdb8132 f085.pdf pdf_icon

FDB8160F085

October 2014FDB8132_F085N-Channel PowerTrench MOSFETDD30 V, 110 A, 1.6 m Features Typ RDS(on) = 1.4m at VGS = 10V, ID = 80A G Typ Qg(tot) = 244nC at VGS = 10V, ID = 80A UIS Capability GS RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteathttps://www.fairchi

 9.2. Size:324K  fairchild semi
 fdb8132.pdf pdf_icon

FDB8160F085

February 2011FDB8132_F085N-Channel PowerTrench MOSFET 30V, 80A, 1.6m ApplicationsFeatures Typ rDS(on) = 1.4m at VGS = 10V, ID = 80A 12V Automotive Load Control Typ Qg(10) = 209nC at VGS = 10V Starter/Alternator Systems Typ Qg(10) = 269nC at VGS = 13V Electronic Power Steering Systems Low Miller Charge DC/DC converter Low Qrr Body Diode UIS Capability (Single Pu

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Datasheet: STU413S , FDB390N15A , FDB44N25 , FDB52N20 , STU417L , FDB5800 , FDB8132F085 , STU326S , AO3401 , STU312D , FDB8441 , FDB8441F085 , FDB8442 , FDB8442F085 , FDB8443 , FDB8443F085 , FDB8444 .

History: FDB8441

Keywords - FDB8160F085 MOSFET datasheet

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