TPU50R250C Specs and Replacement
Type Designator: TPU50R250C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO251
TPU50R250C substitution
- MOSFET ⓘ Cross-Reference Search
TPU50R250C datasheet
tpp50r250c tpa50r250c tpu50r250c tpd50r250c tpc50r250c tpb50r250c.pdf
TPP50R250C, TPA50R250C, TPU50R250C, TPD50R250C, TPC50R250C, TPB50R250C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
tpp50r400c tpa50r400c tpu50r400c tpd50r400c tpc50r400c tpb50r400c.pdf
TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package ... See More ⇒
Detailed specifications: TPD80R900M, TPU80R900M, TPG60R070DFDH, TPG65R125MH, TPG65R360M, TPG70R600M, TPP50R250C, TPA50R250C, 7N65, TPD50R250C, TPC50R250C, TPB50R250C, TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C
Keywords - TPU50R250C MOSFET specs
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