TPA50R400C Datasheet and Replacement
Type Designator: TPA50R400C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
TPA50R400C substitution
TPA50R400C Datasheet (PDF)
tpp50r400c tpa50r400c tpu50r400c tpd50r400c tpc50r400c tpb50r400c.pdf

TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
tpp50r250c tpa50r250c tpu50r250c tpd50r250c tpc50r250c tpb50r250c.pdf

TPP50R250C, TPA50R250C, TPU50R250C, TPD50R250C, TPC50R250C, TPB50R250C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
Datasheet: TPG70R600M , TPP50R250C , TPA50R250C , TPU50R250C , TPD50R250C , TPC50R250C , TPB50R250C , TPP50R400C , IRFP260 , TPU50R400C , TPD50R400C , TPC50R400C , TPB50R400C , TPP60R150C , TPA60R150C , TPV60R150C , TPC60R150C .
History: STW12NA60 | 2SK3075 | SFT1345 | BUK637-500B | SVF8N60F | BRCS150N12SZC | PK696BA
Keywords - TPA50R400C MOSFET datasheet
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History: STW12NA60 | 2SK3075 | SFT1345 | BUK637-500B | SVF8N60F | BRCS150N12SZC | PK696BA



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