TPU60R350C Specs and Replacement
Type Designator: TPU60R350C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO251
TPU60R350C substitution
- MOSFET ⓘ Cross-Reference Search
TPU60R350C datasheet
tpp60r350c tpa60r350c tpu60r350c tpd60r350c tpc60r350c tpb60r350c.pdf
TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
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TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information ... See More ⇒
tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf
TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
tpd60r1k4m tpu60r1k4m.pdf
TPD60R1K4M,TPU60R1K4M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro... See More ⇒
Detailed specifications: TPC50R400C, TPB50R400C, TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C, TPP60R350C, TPA60R350C, SKD502T, TPD60R350C, TPC60R350C, TPB60R350C, TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C
Keywords - TPU60R350C MOSFET specs
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