TPD60R350C Specs and Replacement
Type Designator: TPD60R350C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO252
TPD60R350C substitution
- MOSFET ⓘ Cross-Reference Search
TPD60R350C datasheet
tpp60r350c tpa60r350c tpu60r350c tpd60r350c tpc60r350c tpb60r350c.pdf
TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
tpa60r3k4c tpp60r3k4c tpu60r3k4c tpd60r3k4c.pdf
TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information ... See More ⇒
tpd60r330m.pdf
TPD60R330M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti... See More ⇒
tpa60r360mfd tpd60r360mfd.pdf
TPA60R360MFD,TPD60R360MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l... See More ⇒
Detailed specifications: TPB50R400C, TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C, TPP60R350C, TPA60R350C, TPU60R350C, K4145, TPC60R350C, TPB60R350C, TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C, TPB60R580C
Keywords - TPD60R350C MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2N7002X
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