All MOSFET. TPD65R940C Datasheet

 

TPD65R940C Datasheet and Replacement


   Type Designator: TPD65R940C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO252
 

 TPD65R940C substitution

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TPD65R940C Datasheet (PDF)

 ..1. Size:515K  cn wuxi unigroup
tpp65r940c tpa65r940c tpu65r940c tpd65r940c tpc65r940c tpb65r940c.pdf pdf_icon

TPD65R940C

TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 7.1. Size:748K  cn wuxi unigroup
tpa65r950m tpd65r950m.pdf pdf_icon

TPD65R940C

TPA65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

 7.2. Size:919K  cn wuxi unigroup
tpa65r950m tpb65r950m tpd65r950m.pdf pdf_icon

TPD65R940C

TPA65R950M,TPB65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

 8.1. Size:473K  cn wuxi unigroup
tpd65r520d.pdf pdf_icon

TPD65R940C

TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

Datasheet: TPA65R600C , TPU65R600C , TPD65R600C , TPC65R600C , TPB65R600C , TPP65R940C , TPA65R940C , TPU65R940C , IRF2807 , TPC65R940C , TPB65R940C , TPP70R950C , TPA70R950C , TPU70R950C , TPD70R950C , TPC70R950C , TPB70R950C .

History: L2N7002DMT1G | P3606BEA | HGN046NE6A | UPA1913 | PMGD130UN | 2SK2463 | SVS7N60DD2TR

Keywords - TPD65R940C MOSFET datasheet

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