TPP70R950C Datasheet and Replacement
Type Designator: TPP70R950C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 24 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
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TPP70R950C Datasheet (PDF)
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TPP70R950C, TPA70R950C, TPU70R950C, TPD70R950C, TPC70R950C, TPB70R950C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
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TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190CWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SPP17N80C3 | CS20N50ANH | DMNH10H028SCT | HYG065N07NS1D | IRFPC42 | AP01L60AT | IRLS4030
Keywords - TPP70R950C MOSFET datasheet
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History: SPP17N80C3 | CS20N50ANH | DMNH10H028SCT | HYG065N07NS1D | IRFPC42 | AP01L60AT | IRLS4030



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