TPP70R950C Datasheet and Replacement
Type Designator: TPP70R950C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
TPP70R950C substitution
TPP70R950C Datasheet (PDF)
tpp70r950c tpa70r950c tpu70r950c tpd70r950c tpc70r950c tpb70r950c.pdf
TPP70R950C, TPA70R950C, TPU70R950C, TPD70R950C, TPC70R950C, TPB70R950C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
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Datasheet: TPC65R600C , TPB65R600C , TPP65R940C , TPA65R940C , TPU65R940C , TPD65R940C , TPC65R940C , TPB65R940C , K2611 , TPA70R950C , TPU70R950C , TPD70R950C , TPC70R950C , TPB70R950C , TPP80R270M , TPV80R300C , TPC80R300C .
History: HMS21N60F | IRFSL3107PBF | SI1013X | AON6206
Keywords - TPP70R950C MOSFET datasheet
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History: HMS21N60F | IRFSL3107PBF | SI1013X | AON6206
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