TSB15N06A
MOSFET. Datasheet pdf. Equivalent
Type Designator: TSB15N06A
Marking Code: 15N06A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 208
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 180
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 138
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 667
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package:
TO263
TSB15N06A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSB15N06A
Datasheet (PDF)
..1. Size:452K cn wuxi unigroup
tsb15n06a.pdf
TSB15N06A Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pac
8.1. Size:451K cn wuxi unigroup
tsb15n10a.pdf
TSB15N10A Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa
9.1. Size:265K taiwansemi
tsb1590cx.pdf
TSB1590 Low Vcesat PNP Transistor SOT-23 Pin Definition: PRODUCT SUMMARY 1. Base BVCBO -40V 2. Emitter 3. Collector BVCEO -25V IC -1A VCE(SAT) -0.18V @ IC / IB = -500mA / -50mA Features Ordering Information Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA Part No. Package Packing Complementary part with TSD2444 TSB1590CX RF SOT-23 3Kpcs / 7 Reel Structur
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