TSP120N10AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TSP120N10AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 55 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 25.7 nC
Rise Time (tr): 4 nS
Drain-Source Capacitance (Cd): 201 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO220
TSP120N10AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSP120N10AT Datasheet (PDF)
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