TSP120N10AT Datasheet and Replacement
Type Designator: TSP120N10AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 201 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220
TSP120N10AT substitution
TSP120N10AT Datasheet (PDF)
tsd120n10at tsp120n10at tsg120n10at.pdf

TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)
tsp12n65m tsf12n65m.pdf

TSP12N65M/TSF12N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,650V,Max.RDS(on)=0.75 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
tsp12n60m tsf12n60m.pdf

TSP12N60M/TSF12N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,600V,Max.RDS(on)=0.7 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an
Datasheet: TPW70R100MFD , TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , 50N06 , TSG120N10AT , TSD12N06AT , TSG017N045AT , TSG10N06AT , TSG12N06AT , TSG12N10AT , TSJ10N06AT , TSJ10N10AT .
History: SIB914DK | FQP90N10V2 | CJBD3020 | LNG4N80 | IRF7910PBF-1 | TTB105N06A | LNG4N65
Keywords - TSP120N10AT MOSFET datasheet
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History: SIB914DK | FQP90N10V2 | CJBD3020 | LNG4N80 | IRF7910PBF-1 | TTB105N06A | LNG4N65



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