All MOSFET. TSG120N10AT Datasheet

 

TSG120N10AT Datasheet and Replacement


   Type Designator: TSG120N10AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN5X6
 

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TSG120N10AT Datasheet (PDF)

 ..1. Size:692K  cn wuxi unigroup
 tsd120n10at tsp120n10at tsg120n10at.pdf pdf_icon

TSG120N10AT

TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)

 9.1. Size:481K  cn wuxi unigroup
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TSG120N10AT

TSG12N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)

 9.2. Size:456K  cn wuxi unigroup
 tsg12n10at.pdf pdf_icon

TSG120N10AT

TSG12N10AT Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device P

Datasheet: TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , IRFP460 , TSD12N06AT , TSG017N045AT , TSG10N06AT , TSG12N06AT , TSG12N10AT , TSJ10N06AT , TSJ10N10AT , TSP15N06A .

History: VBZE30N06 | APT10M19SVFR | SQJ431EP | FDD2512 | CEH2288 | IRHMB57Z60 | IRHM9260

Keywords - TSG120N10AT MOSFET datasheet

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