TTP115N08A Datasheet and Replacement
Type Designator: TTP115N08A
Marking Code: 115N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 112 nC
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 302 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO220
TTP115N08A substitution
TTP115N08A Datasheet (PDF)
ttb115n08a ttp115n08a.pdf

TTB115N08A,TTP115N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)
ttb115n08aa ttp115n08aa.pdf

TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V)
ttp115n68a.pdf

TTP115N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V)
ttb118n08a ttp118n08a.pdf

TTB118N08A,TTP118N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 118A Low Gate Charge RDS(ON) (at VGS =10V)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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