TTP115N08AA MOSFET. Datasheet pdf. Equivalent
Type Designator: TTP115N08AA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 105 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 112 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 302 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220
TTP115N08AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTP115N08AA Datasheet (PDF)
ttb115n08aa ttp115n08aa.pdf
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ttb115n08a ttp115n08a.pdf
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ttp115n68a.pdf
TTP115N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V)
ttb118n08a ttp118n08a.pdf
TTB118N08A,TTP118N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 118A Low Gate Charge RDS(ON) (at VGS =10V)
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