TTP115N08AA Specs and Replacement
Type Designator: TTP115N08AA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 302 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220
TTP115N08AA substitution
- MOSFET ⓘ Cross-Reference Search
TTP115N08AA datasheet
ttb115n08aa ttp115n08aa.pdf
TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒
ttb115n08a ttp115n08a.pdf
TTB115N08A,TTP115N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒
ttp115n68a.pdf
TTP115N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒
ttb118n08a ttp118n08a.pdf
TTB118N08A,TTP118N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 118A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒
Detailed specifications: TSP15N10A, TTB105N06A, TTP105N06A, TTB105N08A, TTP105N08A, TTB115N08A, TTP115N08A, TTB115N08AA, 7N65, TTB118N08A, TTP118N08A, TTB135N68A, TTP135N68A, TTB145N06A, TTP145N06A, TTB145N08A, TTP145N08A
Keywords - TTP115N08AA MOSFET specs
TTP115N08AA cross reference
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TTP115N08AA substitution
TTP115N08AA replacement
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History: TDM3436 | TDM3432
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