TTD120N03AT Specs and Replacement
Type Designator: TTD120N03AT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 465 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO252
TTD120N03AT substitution
- MOSFET ⓘ Cross-Reference Search
TTD120N03AT datasheet
ttd120n03at ttp120n03at.pdf
TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package ... See More ⇒
ttd120n04at ttp120n04at.pdf
TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and ... See More ⇒
Detailed specifications: TTP85N08A, TTB85N08AA, TTP85N08AA, TTB95N68A, TTD95N68A, TTP95N68A, TTD100N04AT, TTP100N04AT, 5N65, TTP120N03AT, TTD120N04AT, TTP120N04AT, TTD135N68A, TTD160N03GT, TTP160N03GT, TTD18P10AT, TTP18P10AT
Keywords - TTD120N03AT MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: TTP95N68A
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