TTD90N03AT Specs and Replacement

Type Designator: TTD90N03AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 103 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 416 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO252

TTD90N03AT substitution

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TTD90N03AT datasheet

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TTD90N03AT

TTD90N03AT, TTP90N03AT Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In... See More ⇒

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TTD90N03AT

TTD90P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET Features Product Summary VDS -30V Trench Power Technology Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TTD35N02AV, TTD40P03AT, TTD50P04AT, TTD60N03QT, TTD65N04AT, TTD70N04AT, TTP70N04AT, TTD85N03AT, RFP50N06, TTP90N03AT, TTD90P03AT, TTG160N03AT, TTG160N03GT, TTG65N10A, TTG90P03ATC, TTJ12P03AT, TTK8205

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs