All MOSFET. TTD90N03AT Datasheet

 

TTD90N03AT Datasheet and Replacement


   Type Designator: TTD90N03AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 103 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 416 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO252
 

 TTD90N03AT substitution

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TTD90N03AT Datasheet (PDF)

 ..1. Size:450K  cn wuxi unigroup
 ttd90n03at ttp90n03at.pdf pdf_icon

TTD90N03AT

TTD90N03AT, TTP90N03AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In

 9.1. Size:419K  cn wuxi unigroup
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TTD90N03AT

TTD90P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET Features Product Summary VDS -30V Trench Power Technology Low RDS(ON) RDS(ON) (at VGS=10V)

Datasheet: TTD35N02AV , TTD40P03AT , TTD50P04AT , TTD60N03QT , TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT , SKD502T , TTP90N03AT , TTD90P03AT , TTG160N03AT , TTG160N03GT , TTG65N10A , TTG90P03ATC , TTJ12P03AT , TTK8205 .

History: 2SK681A | OSG65R200FEF

Keywords - TTD90N03AT MOSFET datasheet

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