TTD90N03AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TTD90N03AT
Marking Code: 90N03AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 62 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 416 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO252
TTD90N03AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTD90N03AT Datasheet (PDF)
ttd90n03at ttp90n03at.pdf
TTD90N03AT, TTP90N03AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In
ttd90p03at.pdf
TTD90P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET Features Product Summary VDS -30V Trench Power Technology Low RDS(ON) RDS(ON) (at VGS=10V)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
