TTP90N03AT Specs and Replacement
Type Designator: TTP90N03AT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 416 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
TTP90N03AT substitution
- MOSFET ⓘ Cross-Reference Search
TTP90N03AT datasheet
ttd90n03at ttp90n03at.pdf
TTD90N03AT, TTP90N03AT Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In... See More ⇒
Detailed specifications: TTD40P03AT , TTD50P04AT , TTD60N03QT , TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT , SI2302 , TTD90P03AT , TTG160N03AT , TTG160N03GT , TTG65N10A , TTG90P03ATC , TTJ12P03AT , TTK8205 , TTK8205A .
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