All MOSFET. TTP115N68A Datasheet

 

TTP115N68A Datasheet and Replacement


   Type Designator: TTP115N68A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 332 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO220
 

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TTP115N68A Datasheet (PDF)

 ..1. Size:752K  cn wuxi unigroup
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TTP115N68A

TTP115N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 68V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V)

 7.1. Size:445K  cn wuxi unigroup
 ttb115n08a ttp115n08a.pdf pdf_icon

TTP115N68A

TTB115N08A,TTP115N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)

 7.2. Size:811K  cn wuxi unigroup
 ttb115n08aa ttp115n08aa.pdf pdf_icon

TTP115N68A

TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V)

 9.1. Size:790K  cn wuxi unigroup
 ttb118n08a ttp118n08a.pdf pdf_icon

TTP115N68A

TTB118N08A,TTP118N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 118A Low Gate Charge RDS(ON) (at VGS =10V)

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