VBL1105 Specs and Replacement

Type Designator: VBL1105

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO263

VBL1105 substitution

- MOSFET ⓘ Cross-Reference Search

 

VBL1105 datasheet

 ..1. Size:619K  cn vbsemi
 vbl1105.pdf pdf_icon

VBL1105

VBL1105 www.VBsemi.com N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) New Package with Low Thermal Resistance 100 0.005 at VGS = 10 V 110a 100 % Rg Tested D D2PAK (TO-263) G D S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Sour... See More ⇒

 8.1. Size:1796K  cn vbsemi
 vbl1104n.pdf pdf_icon

VBL1105

VBL1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle... See More ⇒

 8.2. Size:1080K  cn vbsemi
 vbm1101n vbl1101n.pdf pdf_icon

VBL1105

VBM1101N/VBL1101N www.VBsemi.com N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 85 0.0100 at VGS = 6 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S Top View N-Ch... See More ⇒

 8.3. Size:890K  cn vbsemi
 vbl1101n.pdf pdf_icon

VBL1105

VBL1101N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.010 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 85 D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis... See More ⇒

SHOW MORE

Detailed specifications: VBK3215N, VBK362K, VBK4223N, VBK5213N, VBK8238, VBL1101M, VBL1101N, VBL1104N, 8N60, VBL1154N, VBL1203M, VBL1310, VBL1405, VBL1603, VBL1615, VBL1632, VBL165R04

Keywords - VBL1105 MOSFET specs

 VBL1105 cross reference

 VBL1105 equivalent finder

 VBL1105 pdf lookup

 VBL1105 substitution

 VBL1105 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.