All MOSFET. VBL1105 Datasheet

 

VBL1105 Datasheet and Replacement


   Type Designator: VBL1105
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263
 

 VBL1105 substitution

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VBL1105 Datasheet (PDF)

 ..1. Size:619K  cn vbsemi
 vbl1105.pdf pdf_icon

VBL1105

VBL1105www.VBsemi.comN-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) New Package with Low Thermal Resistance100 0.005 at VGS = 10 V 110a 100 % Rg TestedDD2PAK (TO-263)GD SGSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitDrain-Sour

 8.1. Size:1796K  cn vbsemi
 vbl1104n.pdf pdf_icon

VBL1105

VBL1104Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unle

 8.2. Size:1080K  cn vbsemi
 vbm1101n vbl1101n.pdf pdf_icon

VBL1105

VBM1101N/VBL1101Nwww.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC850.0100 at VGS = 6 VTO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S Top ViewN-Ch

 8.3. Size:890K  cn vbsemi
 vbl1101n.pdf pdf_icon

VBL1105

VBL1101Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis

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Datasheet: VBK3215N , VBK362K , VBK4223N , VBK5213N , VBK8238 , VBL1101M , VBL1101N , VBL1104N , 8N60 , VBL1154N , VBL1203M , VBL1310 , VBL1405 , VBL1603 , VBL1615 , VBL1632 , VBL165R04 .

History: FDS6673AZ

Keywords - VBL1105 MOSFET datasheet

 VBL1105 cross reference
 VBL1105 equivalent finder
 VBL1105 lookup
 VBL1105 substitution
 VBL1105 replacement

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