VBL2625 Specs and Replacement
Type Designator: VBL2625
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0190 typ Ohm
Package: TO263
VBL2625 substitution
- MOSFET ⓘ Cross-Reference Search
VBL2625 datasheet
vbl2625.pdf
VBL2625 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.0195 at VGS = - 10 V - 53 APPLICATIONS - 60 76 nC 0.0250 at VGS = - 4.5 V - 42 Load Switch S D2PAK (TO-263) G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par... See More ⇒
vbl2658.pdf
VBL2658 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load ... See More ⇒
vbl2610n.pdf
VBL2610N www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.064 at VGS = - 10 V - 30 APPLICATIONS - 60 12 0.077 at VGS = - 4.5 V - 28 Load Switch S D2PAK (TO-263) G G D S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒
Detailed specifications: VBL1603, VBL1615, VBL1632, VBL165R04, VBL165R18, VBL1806, VBL2309, VBL2610N, IRFB7545, VBL2658, VBM1101M, VBM1101N, VBM1102N, VBM1104N, VBM1105, VBM1151N, VBM1158N
Keywords - VBL2625 MOSFET specs
VBL2625 cross reference
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VBL2625 substitution
VBL2625 replacement
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