VBL2625 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBL2625
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 104.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 53 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 76 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0190(typ) Ohm
Package: TO263
VBL2625 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBL2625 Datasheet (PDF)
vbl2625.pdf
VBL2625www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 53APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 42 Load SwitchSD2PAK (TO-263)GDGDSP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
vbl2658.pdf
VBL2658www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load
vbl2610n.pdf
VBL2610Nwww.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.064 at VGS = - 10 V - 30APPLICATIONS- 60120.077 at VGS = - 4.5 V - 28 Load SwitchSD2PAK(TO-263)GGDSDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
