VBM1201M Specs and Replacement

Type Designator: VBM1201M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO220AB

VBM1201M substitution

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VBM1201M datasheet

 ..1. Size:789K  cn vbsemi
 vbm1201m.pdf pdf_icon

VBM1201M

VBM1201M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Primary Side Switch D DRAIN connected to TAB G G D S Top View S N-C... See More ⇒

 7.1. Size:1415K  cn vbsemi
 vbm1201k.pdf pdf_icon

VBM1201M

VBM1201K www.VBsemi.com N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G ... See More ⇒

 8.1. Size:502K  cn vbsemi
 vbm1208n.pdf pdf_icon

VBM1201M

VBM1208N www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G... See More ⇒

 8.2. Size:595K  cn vbsemi
 vbm1203m.pdf pdf_icon

VBM1201M

VBM1203M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.270 at VGS =10V 10 200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-220AB D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RA... See More ⇒

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Detailed specifications: VBM1101M, VBM1101N, VBM1102N, VBM1104N, VBM1105, VBM1151N, VBM1158N, VBM1201K, AO4468, VBM1202M, VBM1203M, VBM1206, VBM1208N, VBM1302, VBM1303, VBM1307, VBL1307

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