VBL1307 Specs and Replacement

Type Designator: VBL1307

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 typ Ohm

Package: TO263

VBL1307 substitution

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VBL1307 datasheet

 ..1. Size:1552K  cn vbsemi
vbm1307 vbl1307.pdf pdf_icon

VBL1307

VBM1307/VBL1307 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0075 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0095 ID (A) 70 Configuration Single Package TO-220AB/ TO-263 TO-220AB D TO-263 G S G D S N-Channel MOSFET G D S Top ... See More ⇒

 8.1. Size:491K  cn vbsemi
vbnc1303 vbl1303.pdf pdf_icon

VBL1307

VBNC1303 / VBL1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D ... See More ⇒

 9.1. Size:1024K  cn vbsemi
vbl1310.pdf pdf_icon

VBL1307

VBL1310 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.012 at VGS = 10 V 50 30 25 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing Server DC/DC D2PAK (TO-263) G G D S S N-Channel MOSFET ABSO... See More ⇒

Detailed specifications: VBM1201M, VBM1202M, VBM1203M, VBM1206, VBM1208N, VBM1302, VBM1303, VBM1307, IRF540, VBM1310, VBM1402, VBM1405, VBM15R08, VBM15R13, VBM1603, VBM1606, VBM1615

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