VBL1307 Datasheet and Replacement
Type Designator: VBL1307
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007(typ) Ohm
Package: TO263
VBL1307 substitution
VBL1307 Datasheet (PDF)
vbm1307 vbl1307.pdf

VBM1307/VBL1307www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0075 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0095ID (A) 70Configuration SinglePackage TO-220AB/ TO-263TO-220AB DTO-263GSG D SN-Channel MOSFETG D STop
vbnc1303 vbl1303.pdf

VBNC1303 / VBL1303www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGD
vbl1310.pdf

VBL1310www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.012 at VGS = 10 V 5030 25 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ing Server DC/DCD2PAK(TO-263)GGDSSN-Channel MOSFETABSO
Datasheet: VBM1201M , VBM1202M , VBM1203M , VBM1206 , VBM1208N , VBM1302 , VBM1303 , VBM1307 , IRF540N , VBM1310 , VBM1402 , VBM1405 , VBM15R08 , VBM15R13 , VBM1603 , VBM1606 , VBM1615 .
History: AP6924GEY | FCP850N80Z
Keywords - VBL1307 MOSFET datasheet
VBL1307 cross reference
VBL1307 equivalent finder
VBL1307 lookup
VBL1307 substitution
VBL1307 replacement
History: AP6924GEY | FCP850N80Z



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