VBM1808 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBM1808
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35.5 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065(typ) Ohm
Package: TO220AB
VBM1808 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBM1808 Datasheet (PDF)
vbm1808.pdf
VBM1808www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Backligh
vbm1806.pdf
VBM1806www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065 at VGS = 10 V 10080 0.0090 at VGS = 6.0 V 90 17.1 nC0.0140 at VGS = 4.5 V 70TO-220AB DGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symb
vbm18r15s vbmb18r15s vbp18r15s.pdf
VBM18R15S / VBMB18R15S / VBP18R15Swww.VBsemi.comN-Channel 800V (D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 800Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
